technische information / technical information igbt-module igbt-modules ff150r12ks4 h?chstzul?ssige werte / maximum rated values elektrische eigenschaften / electrical properties kollektor-emitter-sperrspannung collector-emitter voltage t vj = 25 c v ces 1200 v kollektor-dauergleichstrom t c = 70 c i c,nom. 150 a dc-collector current t c = 25 c i c 225 a periodischer kollektor spitzenstrom repetitive peak collector current t p = 1 ms, t c = 80c i crm 300 a gesamt-verlustleistung total power dissipation t c =25c, transistor p tot 1,2 kw gate-emitter-spitzenspannung gate-emitter peak voltage v ges +/- 20v v dauergleichstrom dc forward current i f 150 a periodischer spitzenstrom repetitive peak forw. current t p = 1 ms i frm 300 a grenzlastintegral der diode i 2 t - value, diode v r = 0v, t p = 10ms, t vj = 125c i 2 t 9 k a 2 s isolations-prfspannung insulation test voltage rms, f = 50 hz, t = 1 min. v isol 2,5 kv charakteristische werte / characteristic values transistor / transistor min. typ. max. kollektor-emitter s?ttigungsspannung i c = 150a, v ge = 15v, t vj = 25c v ce sat - 3,2 3,7 v collector-emitter saturation voltage i c = 150a, v ge = 15v, t vj = 125c - 3,85 - v gate-schwellenspannung gate threshold voltage i c = 6ma, v ce = v ge , t vj = 25c v ge(th) 4,5 5,5 6,5 v gateladung gate charge v ge = -15v...+15v q g - 1,6 - c eingangskapazit?t input capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c ies -11-nf rckwirkungskapazit?t reverse transfer capacitance f = 1mhz,t vj = 25c,v ce = 25v, v ge = 0v c res - 0,5 - nf kollektor-emitter reststrom collector-emitter cut-off current gate-emitter reststrom gate-emitter leakage current v ce = 0v, v ge = 20v, t vj = 25c i ges - - 400 na prepared by: mod-d2; martin knecht date of publication: 2003-01-13 approved by: sm tm; wilhelm rusche revision: 3.0 v ce = 1200v, v ge = 0v, t vj = 25c i ces --5ma 1 (8) db_ff150r12ks4_3.0 2003-01-13
technische information / technical information igbt-module igbt-modules ff150r12ks4 charakteristische werte / characteristic values transistor / transistor min. typ. max. einschaltverz?gerungszeit (ind. last) i c = 150a, v ce = 600v turn on delay time (inductive load) v ge = 15v, r g = 6,8 ? , t vj = 25c t d,on - 0,10 - s v ge = 15v, r g = 6,8 ? , t vj = 125c - 0,13 - s anstiegszeit (induktive last) i c = 150a, v ce = 600v rise time (inductive load) v ge = 15v, r g = 6,8 ? , t vj = 25c t r - 0,09 - s v ge = 15v, r g = 6,8 ? , t vj = 125c - 0,10 - s abschaltverz?gerungszeit (ind. last) i c = 150a, v ce = 600v turn off delay time (inductive load) v ge = 15v, r g = 6,8 ? , t vj = 25c t d,off - 0,53 - s v ge = 15v, r g = 6,8 ? , t vj = 125c - 0,59 - s fallzeit (induktive last) i c = 150a, v ce = 600v fall time (inductive load) v ge = 15v, r g = 6,8 ? , t vj = 25c t f - 0,06 - s v ge = 15v, r g = 6,8 ? , t vj = 125c - 0,07 - s einschaltverlustenergie pro puls i c = 150a, v ce = 600v, v ge = 15v turn-on energy loss per pulse r g = 6,8 ? , t vj = 125c, l = 60nh e on - 14,5 - mj abschaltverlustenergie pro puls i c = 150a, v ce = 600v, v ge = 15v turn-off energy loss per pulse r g = 6,8 ? , t vj = 125c, l = 60nh e off -11-mj kurzschlu?verhalten t p 10s, v ge 15v, r g = 6,8 ? sc data t vj 125c, v cc =900v, v cemax =v ces -l ce di/dt i sc - 950 - a modulinduktivit?t stray inductance module anschlsse / terminals 2-3 l ce - 20 - nh modul leitungswiderstand, anschlsse ? chip module lead resistance, terminals ? chip pro zweig / per arm, t c =25c r cc?+ee? - 0,7 - m ? charakteristische werte / characteristic values diode / diode min. typ. max. durchla?spannung i f = 150a, v ge = 0v, t vj = 25c v f - 2,0 2,4 v forward voltage i f = 150a, v ge = 0v, t vj = 125c - 1,7 - v rckstromspitze i f = 150a, - di f /dt = 1500a/s peak reverse recovery current v r = 600v, v ge = -15v, t vj = 25c i rm - 105 - a v r = 600v, v ge = -15v, t vj = 125c - 165 - a sperrverz?gerungsladung i f = 150a, - di f /dt = 1500a/s recovered charge v r = 600v, v ge = -15v, t vj = 25c q r - 11,5 - c v r = 600v, v ge = -15v, t vj = 125c - 30,0 - c abschaltenergie pro puls i f = 150a, - di f /dt = 1500a/s reverse recovery energy v r = 600v, v ge = -15v, t vj = 25c e rec -6-mj v r = 600v, v ge = -15v, t vj = 125c - 14,5 - mj 2 (8) db_ff150r12ks4_3.0 2003-01-13
technische information / technical information igbt-module igbt-modules ff150r12ks4 thermische eigenschaften / thermal properties min. typ. max. innerer w?rmewiderstand transistor / transistor,dc , pro modul / per module r thjc - - 0,050 k/w thermal resistance, junction to case transistor / transistor,dc , pro zweig / per arm - - 0,100 k/w diode / diode, dc, pro modul / per module - - 0,125 k/w diode / diode, dc, pro zweig / per arm - - 0,250 k/w bergangs-w?rmewiderstand pro modul / per module r thck - 0,010 - k/w thermal resistance, case to heatsink pro zweig / per arm - 0,020 - k/w paste = 1 w/m*k / grease = 1 w/m*k h?chstzul?ssi g e sperrschichttemperatur maximum junction temperature t vj max - - 150 c betriebstemperatur operation temperature t vj op -40 - 125 c lagertemperatur storage temperature t stg -40 - 125 c mechanische eigenschaften / mechanical properties geh?use, siehe anlage case, see appendix innere isolation internal insulation al 2 o 3 kriechstrecke creepage distance 20 mm luftstrecke clearance distance 11 mm cti comperative tracking index 425 anzugsdrehmoment f. mech. befestigung nm mounting torque anzugsdrehmoment f. elektr. anschlsse nm terminal connection torque gewicht weight g 340 g mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes. - anschlsse / terminals m6 m m 3,0 2,5 schraube / screw m6 - 6,0 5,0 3 (8) db_ff150r12ks4_3.0 2003-01-13
technische information / technical information igbt-module igbt-modules ff150r12ks4 i c [a] v ce [v] i c [a] v ce [v] 0 50 100 150 200 250 300 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 tvj = 25c tvj = 125c ausgangskennlinie (typisch) i c = f (v ce ) output characteristic (typical) v ge = 15v 0 50 100 150 200 250 300 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 vge = 8v vge = 9v vge = 10v vge = 12v vge = 15v vge = 20v ausgangskennlinienfeld (typisch) i c = f (v ce ) output characteristic (typical) t vj = 125c 4 (8) db_ff150r12ks4_3.0 2003-01-13
technische information / technical information igbt-module igbt-modules ff150r12ks4 i c [a] v ge [v] i f [a] v f [v] 0 50 100 150 200 250 300 56789101112 tvj = 25c tvj = 125c bertragungscharakteristik (typisch) i c = f (v ge ) transfer characteristic (typical) v ce = 20v 0 50 100 150 200 250 300 0,0 0,5 1,0 1,5 2,0 2,5 3,0 tvj = 25c tvj = 125c durchla?kennlinie der inversdiode (typisch) i f = f (v f ) forward characteristic of inverse diode (typical) 5 (8) db_ff150r12ks4_3.0 2003-01-13
technische information / technical information igbt-module igbt-modules ff150r12ks4 e [mj] i c [a] e [mj] r g [ ? ] 0 5 10 15 20 25 30 35 40 45 50 0 50 100 150 200 250 300 eon eoff erec schaltverluste (typisch) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) switching losses (typical) v ge =15v, r g =6,8 ? , v ce = 600v, t vj = 125c 0,0 10,0 20,0 30,0 40,0 50,0 60,0 0 5 10 15 20 25 30 eon eoff erec schaltverluste (typisch) e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) switching losses (typical) v ge =15v , i c = 150a , v ce = 600v , t vj = 125c 6 (8) db_ff150r12ks4_3.0 2003-01-13
technische information / technical information igbt-module igbt-modules ff150r12ks4 z thjc [k / w] i 1234 r i [k/kw] : igbt 44,54 33,9 21,52 0,04 i [s] : igbt 0,006 0,029 0,043 1,014 r i [k/kw] : diode 68,24 101,68 52,66 27,42 i [s] : diode 0,006 0,035 0,033 0,997 i c [a] v ce [v] t [s] sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) v ge = 15v, r g = 6,8 ? , t vj = 125c transienter w?rmewiderstand z thjc = f (t) transient thermal impedance 0,001 0,01 0,1 1 0,001 0,01 0,1 1 10 zth:diode zth:igbt 0 50 100 150 200 250 300 350 0 200 400 600 800 1000 1200 1400 ic,modul ic,chip 7 (8) db_ff150r12ks4_3.0 2003-01-13
technische information / technical information igbt-module igbt-modules ff150r12ks4 geh?usema?e / schaltbild package outline / circuit diagram 8 (8) db_ff150r12ks4_3.0 2003-01-13
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